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JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

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JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

Name: JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application
Brand: JUYI
Price: 1 USD

Best JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application wholesale

Brand Name : JUYI

Model Number : JY11M

MOQ : 1 set

Packaging Details : PE bag+ carton

Place of Origin : China

Price : Negotiable

Delivery Time : 5-10 days

Payment Terms : T/T,L/C,Paypal

Supply Ability : 1000sets/day

Drain-Source Voltage : 100 V

Gate-Source Voltage : ±20V

Maximum Power Dissipation : 210W

Pulsed Drain Current : 395A

High Voltage : Yes

reverse body recovery : Yes

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JY11M N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.

FEATURES

● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol	Parameter	Limit	Unit
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	± 20	V
ID	Continuous Drain Current	Tc=25ºC	110	A
Tc=100ºC	82
IDM	Pulsed Drain Current	395	A
PD	Maximum Power Dissipation	210	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +175	ºC
RθJC	Thermal Resistance-Junction to Case	0.65	ºC/W
RθJA	Thermal Resistance-Junction to Ambient	62

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V,IDS=250uA	100	V
IDSS	Zero Gate Voltage Drain Current	VDS=100V,VGS=0V	1	uA
IGSS	Gate-Body Leakage Current	VGS=± 20V,VDS=0V	± 100	nA
VGS(th)	Gate Threshold Voltage	VDS= VGS, IDS=250uA	2.0	3.0	4.0	V
RDS(ON)	Drain-Source On-state Resistance	VGS=10V,IDS=40A	6.5	mΩ
gFS	Forward Transconductance	VDS=50V, IDS=40A	100	S

JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

DOWNLOAD JY11M USER MANUAL

JY11M.pdf

Product Tags:

pwm mosfet driver

mosfet stepper driver

JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application Images

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