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JUYI JY16M Mosfet Power Controller High Efficiency Switch Mode Power For BLDC Motor Driver Board

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JUYI JY16M Mosfet Power Controller High Efficiency Switch Mode Power For BLDC Motor Driver Board

Brand Name : JUYI

Model Number : JY16M

MOQ : 1 set

Packaging Details : PE bag+ carton

Place of Origin : China

Price : Negotiable

Delivery Time : 5-10 days

Payment Terms : T/T,L/C,Paypal

Supply Ability : 1000sets/day

Drain-Source Voltage : 600 V

Gate-Source Voltage : ±30V

Maximum Power Dissipation : 33W

Pulsed Drain Current : 16A

Application : Lighting

Shape : Square

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JY16M N Channel 600V TO220F-3 Package
Enhancement Mode Power MOSFET for BLDC motor driver

GENERAL DESCRIPTION
The JY16M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.


FEATURES
● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation


APPLICATIONS
● Lighting
● High efficiency switch mode power supplies

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage ± 30 V
ID Continuous Drain
Current		 Tc=25ºC 4 A
Tc=100ºC 2.9
IDM Pulsed Drain Current 16 A
PD Maximum Power Dissipation 33 W
TJ TSTG Operating Junction and Storage Temperature
Range		 -55 to +150 ºC
RθJC Thermal Resistance-Junction to Case 1.5 ºC/W
RθJA Thermal Resistance-Junction to Ambient 62


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source
Breakdown Voltage		 VGS=0V,IDS=250uA 600 V
IDSS Zero Gate Voltage
Drain Current		 VDS=600V,VGS=0V 1 uA
IGSS Gate-Body Leakage
Current		 VGS=± 30V,VDS=0V ± 100 nA
VGS(th) Gate Threshold
Voltage		 VDS= VGS, IDS=250uA 2.0 3.0 4.0 V
RDS(ON) Drain-Source
On-state Resistance		 VGS=10V,IDS=4A 2.6 2.8 Ω


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Drain-Source Diode Characteristics
VSD Diode Forward
Voltage		 VGS=0V,ISD=2A 1.5 V
Trr Reverse Recovery Time ISD=4A
di/dt=100A/us		 260 ns
Qrr Reverse Recovery Charge 1.5 nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,
f=1MHZ		 5 Ω
Td(on) Turn-on Delay Time VDS=300V,
RG=25Ω,
IDS =4A, VGS=10V,		 15 ns
Tr Turn-on Rise Time 48
Td(off) Turn-off Delay Time 28
Tf Turn-off Fall Time 35
CISS Input Capacitance VGS=0V,
VDS=25V,
f=1.0MHz		 528 pF
COSS Output Capacitance 72
CRSS Reverse Transfer
Capacitance		 9
Qg Total Gate Charge VDS=480V,ID=4A,
VGS=10V		 16 nC
Qgs Gate-Source Charge 3.5
Qgd Gate-Drain Charge 7.1


DOWNLOAD JY16M USER MANUAL

JUYI JY16M Mosfet Power Controller High Efficiency Switch Mode Power For BLDC Motor Driver BoardJY16M.pdf


Product Tags:

pwm mosfet driver

      

mosfet stepper driver

      
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