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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

Name: JUYI 500V8A N Channel Enhancement Mode Power MOSFET
Brand: JUYI
Price: 1 USD

Best JUYI 500V/8A N Channel Enhancement Mode Power MOSFET wholesale

Brand Name : JUYI

Model Number : JY8N5M

Place of Origin : China

MOQ : 10set

Price : Negotiable

Payment Terms : L/C, T/T,Paypal

Supply Ability : 1000sets/day

Delivery Time : 5-8 working days

Packaging Details : PE bag+ carton

Drain-Source Voltage : 500V

Gate-Source Voltage : ±30

Pulsed Drain Current : 30A

Maximum Power Dissipation : 80W

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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive

avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

FEATURES

● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)

● Fast switching and reverse body recovery

● Excellent package for good heat dissipation

APPLICATIONS

● Lighting

● High efficiency switch mode power supplies

PIN DESCRIPTION

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol	Parameter		Limit	Unit
VDS	Drain-Source Voltage		500	V
VGS	Gate-Source Voltage		±30	V
ID	Continuous Drain Current	Tc=25ºC	8	A
ID	Continuous Drain Current	Tc=100ºC	4.8	A
IDM	Pulsed Drain Current		30	A
PD	Maximum Power Dissipation		80	W
TJ TSTG	Operating Junction and Storage Temperature Range		-55+150	ºC
RθJC	Thermal Resistance-Junction to Case		1.56	℃/W

Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET Images

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